K80E08K3 Silicon N Channel MOSFET

TK80E08K3 2010-07-09 1TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSIV) TK80E08K3„E-Bike/UPS/Inverter zLow drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.) zHigh forward transfer admittance : |Yfs| = 135 S (typ.) zLow leakage current : IDSS = 10 μA (max) (VDS = 75 V) zEnhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating Unit Drain−source voltage VDSS 75 V Drain−gate voltage (RGS = 20 kΩ) VDGR 75V Gate−source voltage VGSS ±20 V DC (Note 1) ID 80 A DC (Note 1,4) ID 70 A Drain current Pulse (Note 1) IDP 240 A Drain power dissipation (Tc = 25°C) PD 200 W Single pulse avalanche energy (Note 2) EAS 107 mJ Avalanche current IAR 40 A Repetitive avalanche energy (Note 3) EAR 20 mJ Peak diode recovery dv/dt (Note 5) dv/dt 12 V/ns Channel temperature (Note 4) Tch 175 °C Storage temperature range (Note 4) Tstg−55~175 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.75°C / WThermal resistance, channel to ambient Rth (ch−a)83.3 °C / WNote 1: Ensure that the channel temperature does not exceed 175°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 40A